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| InGaAs-PIN/Preamp Receiver FEATURES * Data rate up to 156Mb/s * High Responsivity: 0.85A/W at 1,310nm * High temperature operation up to 85C FRM3Z121KT/LT KT APPLICATIONS * Medium bit rate standard medium haul optical transmission system at STM-1 (OC-3) DESCRIPTION These PIN preamplifiers use an InGaAs PIN with a GaAs IC preamplifier. Package style is a hermetically sealed, epoxyless coaxial package with a multimode fiber pigtail. LT Edition 1.0 March 1999 1 FRM3Z121KT/LT ABSOLUTE MAXIMUM RATINGS (Ta=25C) Parameter Storage Temperature Operating Case Temperature IC Supply Voltage PD Supply Voltage PD Reverse Current Maximum Input Power Symbol Tstg Top Vss Vr Ir Po max InGaAs-PIN/Preamp Receiver Ratings -40 to +85 -40 to +85 -7 to +0 0 to +20 500 0 Unit C C V V A dBm OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40 to +85C, Vss=-5.2V, Vr=GND level and =1,310/1,550nm unless otherwise specified) Parameter Responsivity Transimpedance Bandwidth Symbol R Zt BW Test Conditions =1,310nm AC, RL=50, Pin <-20dBm AC-Coupled, RL=50, -3dBm from 1MHz 156Mb/s NRZ, 223-1 P.R.B.S., B.E.R.=10-10 Ta=25C Ta=-40 to +85C Maximum Input Optical Power Power Supply Current Recommended Supply PD Voltage Optical Return Loss Equivalent Input Current Density Pmax Iss Vss Vr ORL in Note (1) avg. within 110MHz Min. 0.8 8.0 110 Limits Typ. 0.85 10.5 Max. Unit A/W K MHz Sensitivity Pr -7 -5.46 0 30 - -39 -38.5 -5.2 1.12 -38 -37.5 40 -4.94 20 1.4 dBm dBm dBm mA V V dB pA/ Hz Note: (1) Maximum Input Optical Power, Pmax is defined as the optical power when the variation of F.W.H.M. of the output waveform is less than 10% compared with that of the low input; optical power level. (2) No data is accompanied with each device. (3) Optical characteristics are specified on the condition that single mode fiber is used as the optical source for testing. 2 InGaAs-PIN/Preamp Receiver Fig. 1 Normarized Output Voltage as a function of Peak Photo Current Ta = 25C Vss=-5.2V VR=5V CW condition RL= =1,310nm FRM3Z121KT/LT Fig. 2 Relative Frequency Response Delta Output Voltage, Vout (V) Relative Response (dB) 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 50 Photo Current (A) +3 Pin=-10dBm 0 -3 -6 -9 Ta = 25C Pin=-35dBm Vss=-5.2V VR=5V AC-Coupled RL=50 =1,310nm/1,550nm 1 10 100 1000 100 Frequency, f(MHz) Fig. 3 Equivalent Input Noise Current Density Fig. 4 Eye diagram with a 1,310nm,156Mbps NRZ, 223-1 PRBS incident signal at Tc = 25C 50mV/Div 1ns/Div 10 Equivalent input noise current density in (pA/Hz) Ta = 25C Vss=-5.2V AC-Coupled RC=50 5 Pin=-7dBm with Bessel filter 1 10 100 Frequency, f (MHz) 1000 3 FRM3Z121KT/LT InGaAs-PIN/Preamp Receiver Fig. 5 Bit Error Rate at 1,310nm and a 156Mbps NRZ 223-1 PRBS for various case temperture 10-3 Ta=25C 10-4 85C 10-5 Bit Error Rate 10-6 -40C 10-7 10-8 10-9 10-10 10-11 10-12 -45 =1,310nm 156Mb/s NRZ Vss=-5.2V VR=GND -40 -35 -30 Received Optical Power (dBm) "KT" PACKAGE GND UNIT: mm 2-C1.5 VR VSS 14.00.15 17.00.2 8.40.2 O0.90.1 4-O0.450.05 OUT O6.0 MAX P.C.D. 2.00.2 P.C.D. 4.00.2 2.50.1 4.4 MAX 10.0 MIN 32.0 MAX O7.2 MAX GND VR 2.00.1 4.20.2 1000 MIN VSS 8.40.2 OUT "LT" PACKAGE GND VR VSS VR UNIT: mm VSS 14.00.15 17.00.2 O0.9 P.C.D. 2.00.2 4-O0.450.05 O6.0 MAX P.C.D. 4.00.2 OUT 7.6 MAX 1.00.1 2.50.1 O7.2 MAX OUT GND 10.0 MIN 32.0 MAX 1000 MIN 4 InGaAs-PIN/Preamp Receiver FRM3Z121KT/LT For further information please contact: CAUTION FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0199M200 5 |
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